A fully integrated D-band direct-conversion I/Q transmitter and receiver chipset in SiGe BiCMOS technology

This paper presents design and characterization of single-chip 110–170 GHz (D-band) direct conversion in-phase/quadrature-phase (I/Q) transmitter receiver monolithic microwave integrated circuits (MMICs), realized in a 130 nm SiGe BiCMOS process with ft/fmax 250 GHz/370 GHz. The chipset is suitable for low power wideband communication can be used both homodyne heterodyne architectures. Transmitter chip consists six-stage amplifier, an I/Q modulator, LO multiplier chain. chain frequency sixtupler followed by two-stage amplifier. It exhibits single sideband gain 23 dB saturated output 0 dBm. 3 RF bandwidth 31 from 114 to 145 includes noise demodulator ×6 at the port. provides 27 has figure 10 dB. 3dB 28 112–140 have dc consumption 240 mW 280 mW, respectively. area each circuit 1.4 mm×1.1 mm.